Air Products introduces its new EXTREMA® STO and GST precursors in support of continued advancements in DRAM and PRAM devices.
The current climate involves rapid expansion and growing demand for cell phone technology and mobile computing is driving DRAM development, meanwhile PRAM is viewed as a potential solution to the increasing need for higher capacity data storage used in server computing.
In light of this, Air Products introduces its new EXTREMA® STO and GST precursors in support of continued advancements in Dynamic Random Access Memory (DRAM) and Phase-change Random Access Memory (PRAM) devices.
The EXTREMA® STO precursors aid manufacturers’ ability to better deposit ultra-high k dialectic films using atomic layer deposition (ALD) for use in 22 nm to 15 nm DRAM devices. Dr Laura Matz, explained, “Air Products’ EXTREMA® Sr and EXTREMA® Ti STO precursors have been employed to deposit STO films which exhibit high dielectric constant and low electrical leakage. These are critical performance factors for our customers.”
Dr Iain Buchanan, Commercial Development Manager for advanced memory materials, commented, “A key feature of these precursors is that they work together to enable compositional control of challenging new films. Until now, semiconductor devices have generally employed simple, binary films (such as Hafnium Oxide) which comprise only two elements (Hafnium and Oxygen),”
Buchanan added, “More recent structures have employed laminates of two binary films (e.g. Zirconium Oxide and Aluminium Oxide) to improve performance. However, the harmonious use of three elements to form a single, precisely controlled ternary film has presented a significant challenge to semiconductor manufacturers. We’re pleased to offer our customers a solution to this problem.”
Air Products will be showcasing these materials at the forthcoming ALD2010 Conference in Seoul, Korea from 20th-23rd June.
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